The effect of an Al buffer layer on the growth of AlN on a Si (111) substrate was investigated to develop an all-sputtered GaN film on a Si (111) template substrate. The X-ray diffraction method revealed an obvious improvement in the crystallinity of an AlN layer on the initial layer. At the interface structure, AlN film without the Al buffer layer exhibited surface nitridation of the Si surface, which degraded the AlN crystal growth. After investigating various growth conditions such as substrate temperature and layer thickness, we achieved the all-sputtered epitaxial growth of a GaN/AlN/Si substrate. The substrate temperature was below 650 C, and the total thickness was less than 200 nm, which is beneficial as regards the cost efficiency of the template substrate for nitride semiconductors.

研究了 Al 缓冲层对 Si (111) 衬底上 AlN 生长的影响，以在 Si (111) 模板衬底上开发全溅射 GaN 膜。X 射线衍射法显示初始层上的 AlN 层的结晶度有明显改善。在界面结构处，没有 Al 缓冲层的 AlN 膜表现出 Si 表面的表面氮化，这降低了 AlN 晶体的生长。在研究了衬底温度和层厚等各种生长条件后，我们实现了 GaN/AlN/Si 衬底的全溅射外延生长。衬底温度低于650℃，总厚度小于200nm，有利于氮化物半导体模板衬底的成本效益。