Thin film growth of Zn _x Mn_1−x S on a Si (100) substrate by sputtering was investigated for nonpolar AlN film growth on Si (100) substrate. The Zn _x Mn_1−x S buffer layer reduces the large differences in thermal expansion coefficient and lattice constants between AlN and Si. Although the solubility of ZnS in MnS is less than 5% at 800 C in bulk form, the insertion of a room-temperature MnS layer between Zn _x Mn_1−x S and Si enabled (100)-oriented cubic-Zn _x Mn_1−x S film growth even at x=9.5%, which is a metastable phase and a phase separation region in bulk form. On the (100)-oriented cubic Zn _x Mn_1−x S film, nonpolar AlN growth was achieved by sputtering. Furthermore, X-ray photoelectron spectroscopy measurements revealed that the Zn _x Mn_1−x S film improved the stability of the AlN/Zn _x Mn_1−x S interface. Zn _x Mn_1−x S has the potential to enable nonpolar AlN growth on large-diameter Si (100) substrates.

研究了通过溅射在 Si (100) 衬底上生长 Zn _x Mn _{1- x} S 的薄膜，用于在 Si (100) 衬底上生长非极性 AlN 膜。Zn _x Mn _{1- x} S 缓冲层减少了 AlN 和 Si 之间热膨胀系数和晶格常数的巨大差异。尽管 ZnS 在 MnS 中的溶解度在 800 C 时以块状形式小于 5%，但在 Zn _x Mn _{1− x} S 和 Si之间插入室温 MnS 层使 (100) 取向的立方 Zn _x Mn _{1 成为可能− x} S 薄膜生长即使在x =9.5%，这是一个亚稳相和体相分离区。在 (100) 取向的立方 Zn _x Mn _{1- x} S 薄膜上，通过溅射实现了非极性 AlN 生长。此外，X 射线光电子能谱测量表明，Zn _x Mn _{1- x} S 膜提高了 AlN/Zn _x Mn _{1- x} S 界面的稳定性。Zn _x Mn _{1- x} S 具有在大直径 Si (100) 衬底上实现非极性 AlN 生长的潜力。