A recessed-channel tunnel field-effect transistor (RCTFET) with intrinsic Si layer between gate and source/drain is proposed and its electrical characteristics are examined by technology computer-aided design simulation for lower subthreshold swing (SS) and higher on-off current ratio (I _ON/I _OFF) than conventional planar TFET. Although the SS and I _ON/I _OFF of RCTFET can be improved by optimizing the length of the intrinsic Si layer (L _T), there is a trade-off in terms of turn-on voltage (V _ON). To address this issue, a ferroelectric (FE) layer has been adopted to the gate stack for negative capacitance (NC) effects. Based on the study, the NC effects not only reduce V _ON but also enhance the SS and I _ON/I _OFF characteristics. As a result, the optimized NC-RCTFET shows 3 times higher I _ON and 23mVdec⁻¹ smaller average SS with 1V lower V _ON than the conventional RCTFET.

提出了一种在栅极和源极/漏极之间具有本征 Si 层的凹陷沟道隧道场效应晶体管 (RCTFET)，并通过技术计算机辅助设计模拟来检查其电气特性，以实现更低的亚阈值摆幅 ( SS ) 和更高的开关电流比 ( I _ON / I _OFF ) 比传统的平面 TFET。尽管可以通过优化本征 Si 层 ( L _T )的长度来改善 RCTFET的SS和I _ON / I _OFF，但在导_通电压 ( V _ON ）。为了解决这个问题，为了负电容 (NC) 效应，栅极堆叠采用了铁电 (FE) 层。根据研究，NC 效应不仅降低了V _ON，而且增强了SS和I _ON / I _OFF特性。因此，优化后的 NC-RCTFET 显示出比传统 RCTFET高 3 倍的I _ON和 23mVdec ^-1更小的平均SS，V _ON低 1V 。