The electric power usage in aircraft has reached 1MW. Therefore, use of high power semiconductor devices expected to increase in avionics. Single event burnout failure happens when power devices operating in blocking condition interact with the cosmic radiation. The failure rate in power devices is more in airplane altitude compare to terrestrial operation. In this paper, the failure rate of high power silicon PiN diode is evaluated when operating in airplane altitude due to the interaction of cosmic ray neutrons. The proposed formula has the unique feature of decoupling between failure cross section and cosmic ray neutron flux. This makes it possible to calculate the failure rate under any cosmic radiation environment using the proposed failure rate formulation.

飞机用电量已达1MW。因此，预计在航空电子设备中使用高功率半导体器件。当功率器件在阻塞状态下运行与宇宙辐射相互作用时，就会发生单粒子烧毁故障。与地面操作相比，飞机高度上功率器件的故障率更高。在本文中，由于宇宙射线中子的相互作用，评估了高功率硅PiN二极管在飞机高度运行时的故障率。所提出的公式具有独特的失效截面与宇宙射线中子通量解耦的特点。这使得使用建议的故障率公式计算任何宇宙辐射环境下的故障率成为可能。