High-photoresponsivity BaSi₂ films is of great importance for solar cell applications. The photoresponsivity was enhanced greatly in C-doped BaSi₂ films formed by sputtering BaSi₂ and SiC or C targets. The shift of Raman peak and optical absorption edge with increasing C concentration (n _C) showed that more C atoms were incorporated in BaSi₂ films when the SiC target was sputtered. When n _C was 6נ10²⁰cm⁻³ by the SiC target, the photoresponsivity approached 2AW⁻¹ under a bias voltage of 0.1V between the top and bottom electrodes. This is the highest value ever reported for BaSi₂ films.

中文翻译：

---

射频溅射制备高光响应性 BaSi2 薄膜的 SiC 和 C 靶材的 C 掺杂技术比较

高光响应性 BaSi ₂薄膜对于太阳能电池应用非常重要。在通过溅射BaSi ₂和SiC或C靶形成的C掺杂BaSi ₂膜中，光响应性大大提高。随着C浓度( n _C )的增加，拉曼峰和光吸收边的移动表明当溅射SiC靶时，更多的C原子被引入到BaSi ₂薄膜中。当碳化硅靶的n _C为 6נ10 ²⁰ cm ^{-3 时}，在顶部和底部电极之间的偏置电压为 0.1V 的情况下，光响应度接近 2AW ^-1。这是 BaSi 有史以来报告的最高值 ₂部电影。