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Comparison of C doping technique between SiC and C targets for high-photoresponsivity BaSi2 films by radio-frequency sputtering
Japanese Journal of Applied Physics ( IF 1.5 ) Pub Date : 2021-04-13 , DOI: 10.35848/1347-4065/abf317
Taira Nemoto 1 , Ryota Koitabashi 1 , Masami Mesuda 2 , Kaoru Toko 3 , Takashi Suemasu 3
Affiliation  

High-photoresponsivity BaSi2 films is of great importance for solar cell applications. The photoresponsivity was enhanced greatly in C-doped BaSi2 films formed by sputtering BaSi2 and SiC or C targets. The shift of Raman peak and optical absorption edge with increasing C concentration (n C) showed that more C atoms were incorporated in BaSi2 films when the SiC target was sputtered. When n C was 6נ1020cm−3 by the SiC target, the photoresponsivity approached 2AW−1 under a bias voltage of 0.1V between the top and bottom electrodes. This is the highest value ever reported for BaSi2 films.



中文翻译:

射频溅射制备高光响应性 BaSi2 薄膜的 SiC 和 C 靶材的 C 掺杂技术比较

高光响应性 BaSi 2薄膜对于太阳能电池应用非常重要。在通过溅射BaSi 2和SiC或C靶形成的C掺杂BaSi 2膜中,光响应性大大提高。随着C浓度( n C )的增加,拉曼峰和光吸收边的移动表明当溅射SiC靶时,更多的C原子被引入到BaSi 2薄膜中。当碳化硅靶的n C为 6נ10 20 cm -3 时,在顶部和底部电极之间的偏置电压为 0.1V 的情况下,光响应度接近 2AW -1。这是 BaSi 有史以来报告的最高值 2部电影。

更新日期:2021-04-13
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