Recently, α-Ga₂O₃ has been attracting great attentions as a new wide bandgap semiconductor, however, the reason why metastable α-Ga₂O₃ is grown by mist chemical vapor deposition (CVD) has not been understood. In this study, in order to elucidate growth mechanism of mist CVD-grown α-Ga₂O₃, growth processes in the initial stage were investigated by atomic force microscopy, transmission electron microscopy, and X-ray diffraction reciprocal space mapping. We found that the characteristics of mist CVD make the relaxation mechanisms of α-Ga₂O₃ on (0001) sapphire different from those of molecular beam epitaxy, pulsed-laser deposition, and metalorganic chemical vapor deposition. We also proposed the growth procedure in the initial stage.

近来，α- Ga ₂ O ₃作为一种新的宽带隙半导体受到了极大的关注，然而，通过雾化化学气相沉积（CVD）生长亚稳态α- Ga ₂ O ₃的原因尚不清楚。在本研究中，为了阐明雾状 CVD 生长的α -Ga ₂ O _{3 的}生长机制，通过原子力显微镜、透射电子显微镜和 X 射线衍射倒易空间映射研究了初始阶段的生长过程。我们发现雾状 CVD 的特性使α -Ga ₂ O ₃的弛豫机制(0001) 蓝宝石不同于分子束外延、脉冲激光沉积和金属有机化学气相沉积。我们还提出了初始阶段的增长程序。