This work illustrates the ample exploitation of ferroelectric through metal-ferroelectric options for nanosheet line tunnel field-effect transistor (NLTFET), for the first time. Here, SiGe and ferroelectric (HZO) are successfully employed to demonstrate the high performance p-NLTFET through simulations. Owing to this, the on-state current (I _on=122.3μAμm⁻¹) is enormously improved through the reduction of gate-oxide thickness even at low gate bias. In addition, the steep subthreshold swing is effectively minimized to 25.96mVdec⁻¹ by controlling the off-state current, gate-leakage and trap-assisted-tunneling. Overall, a 2-order boost on the I _on is achieved, compared with planar ferroelectric TFETs.

这项工作首次说明了通过金属-铁电体选项对纳米片线隧道场效应晶体管 (NLTFET) 的铁电体的充分利用。在这里，成功地采用 SiGe 和铁电体 (HZO) 来通过模拟展示高性能p- NLTFET。因此，即使在低栅偏压下，通过减小栅氧化层厚度也极大地改善了导通电流（I _on =122.3 μ A μ m ^-1）。此外，通过控制断态电流、栅极泄漏和陷阱辅助隧道效应，陡峭的亚阈值摆幅有效地最小化至 25.96mVdec ^-1。总体而言，I _上的 2 阶提升 与平面铁电 TFET 相比。