High breakdown voltage (BV) AlGaAs/GaAs/AlGaAs diodes with a pair of hole and electron channels were studied taking account of the residual carbon impurity. The residual acceptor that would affect the charge balance was evaluated by separate growth. Utilizing the residual concentration, the acceptor concentrations (N _A) were examined with a fixed donor concentration of 1.1נ10¹²cm⁻². For N _A of 0.9נ10¹²cm⁻², the diode with 113μm drift region length derived the highest BV of 1800 V. Temperature-dependent I–V measurements revealed the breakdown due to an avalanche multiplication. This implies a uniform electric field across the channels. Then, depletion of both channels was characterized by C–V measurements for obtaining capacitance shut-off voltages of the diodes. The lowest shut-off voltage was obtained for the 0.9נ10¹²cm⁻² N _A diode. This would be due to the simultaneous depletion of hole and electron channels, i.e. the identical net concentration for acceptor and donor.

考虑到残留的碳杂质，研究了具有一对空穴和电子通道的高击穿电压 (BV) AlGaAs/GaAs/AlGaAs 二极管。会影响电荷平衡的残余受体通过单独生长进行评估。利用残留浓度，受体浓度（Ñ _甲）检测用的1.1נ10固定施主浓度¹²厘米^-2。对于0.9נ10 ¹² cm ^{-2 的}N _A，具有 113 μ m 漂移区长度的二极管获得了 1800 V 的最高 BV。与温度相关的I – V测量结果显示由于雪崩倍增造成的击穿。这意味着跨通道的均匀电场。然后，两个通道的耗尽通过C – V测量来表征，以获得二极管的电容关断电压。0.9נ10 ¹² cm ^-2 N _A二极管获得了最低关断电压。这是由于空穴和电子通道同时耗尽，即受体和供体的净浓度相同。