Semiconductor lasers based on AlGaInAs/InP heterostructures with ultra-narrow and asymmetric waveguides are comparatively studied. It is shown that the use of these waveguides with a simultaneous increase in the quantum well depth makes it possible to increase output powers. Such lasers based on both strongly asymmetric and ultra-narrow waveguides with a stripe contact width of 100 μm demonstrate an output power of 5 W (at pump currents of 11.5 and 14 A, respectively) in a continuous-wave regime at room temperature and a wavelength of 1450 – 1500 nm.

中文翻译：

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AlGaInAs/InP 半导体激光器 (λ = 1450 – 1500 nm) 与超窄和强不对称波导的比较

比较研究了基于AlGaInAs/InP异质结构的具有超窄和不对称波导的半导体激光器。结果表明，使用这些波导同时增加量子阱深度可以增加输出功率。这种基于强非对称和超窄波导的激光器，条纹接触宽度为 100 μm，在室温下连续波状态下的输出功率为 5 W（泵浦电流分别为 11.5 和 14 A）和波长为 1450 – 1500 nm。