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Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450 – 1500 nm) with ultra-narrow and strongly asymmetric waveguides
Quantum Electronics Pub Date : 2021-03-30 , DOI: 10.1070/qel17540
N.A. Volkov , V.N. Svetogorov , Yu.L. Ryaboshtan , A.Yu. Andreev , I.V. Yarotskaya , M.A. Ladugin , A.A. Padalitsa , A.A. Marmalyuk , S.O. Slipchenko , A.V. Lyutetskii , D.A. Veselov , N.A. Pikhtin

Semiconductor lasers based on AlGaInAs/InP heterostructures with ultra-narrow and asymmetric waveguides are comparatively studied. It is shown that the use of these waveguides with a simultaneous increase in the quantum well depth makes it possible to increase output powers. Such lasers based on both strongly asymmetric and ultra-narrow waveguides with a stripe contact width of 100 μm demonstrate an output power of 5 W (at pump currents of 11.5 and 14 A, respectively) in a continuous-wave regime at room temperature and a wavelength of 1450 – 1500 nm.



中文翻译:

AlGaInAs/InP 半导体激光器 (λ = 1450 – 1500 nm) 与超窄和强不对称波导的比较

比较研究了基于AlGaInAs/InP异质结构的具有超窄和不对称波导的半导体激光器。结果表明,使用这些波导同时增加量子阱深度可以增加输出功率。这种基于强非对称和超窄波导的激光器,条纹接触宽度为 100 μm,在室温下连续波状态下的输出功率为 5 W(泵浦电流分别为 11.5 和 14 A)和波长为 1450 – 1500 nm。

更新日期:2021-03-30
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