We present a TCAD simulation of the negative capacitance gate-all-around (NCGAA) field-effect transistor with the 3-D Ginzburg-Landau-Khalatnikov Model. The baseline device is based on the 2020 IRDS Table, and the mobility model is calibrated to account for ballistic transport and to match the “1.5 nm node” IRDS on-current requirement. The NC parameters are extracted from experimental C-V data. The NC-GAA shows reduction in the off current by one order of magnitude and a 40% on-current boost. If the gate work function is shifted to align the NC-GAA’s off-current with the IRDS high performance requirement, it is shown that NC-GAA can achieve the on-current and V_DD requirement of every node through the “0.7 eq node,” which is the last node predicted in the 2020 IRDS Table. Furthermore, NC-GAA can even achieve a “0.5 eq node,” which is three additional nodes beyond the baseline “1.5 nm node.” We also show that these benefits are retained over a varying set of ferroelectric parameters.

我们使用3-D Ginzburg-Landau-Khalatnikov模型提出了负电容全能栅极（NCGAA）场效应晶体管的TCAD仿真。基准设备基于2020 IRDS表，并且对迁移率模型进行了校准，以考虑弹道运输并匹配“ 1.5 nm节点” IRDS的当前要求。NC参数是从实验CV数据中提取的。NC-GAA显示截止电流降低了一个数量级，导通电流提高了40％。如果改变栅极功函数以使NC-GAA的截止电流与IRDS高性能要求保持一致，则表明NC-GAA可以实现导通电流和V _DD通过“ 0.7 eq节点”（这是2020 IRDS表中预测的最后一个节点）的每个节点的需求。此外，NC-GAA甚至可以实现“ 0.5 eq节点”，这是基准“ 1.5 nm节点”之外的三个附加节点。我们还表明，在一组不同的铁电参数上保留了这些好处。