If neither traps nor a back-barrier is included in an ideal GaN heterojunction field-effect transistor, its performance is severely degraded by space charge limited current through the buffer layer. This effect is analyzed here by simulation, showing that it results in significant current leakage in the off state not only in short channel devices but also in long channel devices. The output resistance at saturation is also set primarily by space charge limited current through the buffer.

中文翻译：

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无背面势垒的理想GaN异质结场效应晶体管中的空间电荷限制电流

如果理想的GaN异质结场效应晶体管中既不包含陷阱也不包含背势垒，则其性能会受到通过缓冲层的空间电荷限制电流的严重影响。这里通过仿真分析了这种效应，结果表明，不仅在短通道器件中，而且在长通道器件中，它都在截止状态下导致明显的电流泄漏。饱和时的输出电阻也主要由通过缓冲器的空间电荷限制电流来设置。