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Valence Band Structure of Chalcogenide Obtained by X-Ray Photoelectron Spectroscopy and Etching Technique
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-04-23 , DOI: 10.1002/pssb.202100038 Shujing Jia 1, 2, 3 , Nannan Shi 4 , Jiabin Shen 2 , Renjie Wu 2 , Qi Liu 1 , Zhitang Song 2 , Min Zhu 2
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-04-23 , DOI: 10.1002/pssb.202100038 Shujing Jia 1, 2, 3 , Nannan Shi 4 , Jiabin Shen 2 , Renjie Wu 2 , Qi Liu 1 , Zhitang Song 2 , Min Zhu 2
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Chalcogenide glass, such as GeSe, has been widely used in the selector device for high-density vertically stackable memory application due to their nonlinear electrical property. The electronic structure of the valence band, from which the nature of the bonding, the short-range structure, and the Fermi level can be obtained, is of great importance to understand their unique electrical behavior. However, the surface oxidation issue makes it difficult to obtain the accurate valence band structure by X-ray photoelectron spectroscopy (XPS). Herein, XPS depth profiles using the combination of the monatomic and cluster ion etching are performed to determine the valence band structures of amorphous Ge–Se films capped with a thin carbon layer. The completely different etching behavior dependent on composition in the depth profiles may be closely associated with the intrinsic bonding configurations of the amorphous films. After obtaining the fresh surface, the intrinsic valence band structures of amorphous Ge–Se samples demonstrate the different bonding behavior and short-range structure. Most importantly, the Fermi level of amorphous GexSe100−x compounds is also determined.
中文翻译：
通过 X 射线光电子能谱和蚀刻技术获得硫属化物的价带结构
硫属化物玻璃，如 GeSe，由于其非线性电特性，已广泛用于高密度垂直可堆叠存储器应用的选择器器件中。价带的电子结构，从中可以获得键合的性质、短程结构和费米能级，对于理解它们独特的电学行为非常重要。然而，表面氧化问题使得很难通过 X 射线光电子能谱 (XPS) 获得准确的价带结构。在本文中，使用单原子和簇离子蚀刻的组合进行 XPS 深度剖面，以确定覆盖有薄碳层的非晶 Ge-Se 膜的价带结构。取决于深度分布中的成分的完全不同的蚀刻行为可能与非晶膜的本征键配置密切相关。获得新鲜表面后，非晶 Ge-Se 样品的本征价带结构表现出不同的键合行为和短程结构。最重要的是，非晶 Ge 的费米能级x Se 100- x化合物也被确定。
更新日期：2021-04-23
中文翻译：
通过 X 射线光电子能谱和蚀刻技术获得硫属化物的价带结构
硫属化物玻璃，如 GeSe，由于其非线性电特性，已广泛用于高密度垂直可堆叠存储器应用的选择器器件中。价带的电子结构，从中可以获得键合的性质、短程结构和费米能级，对于理解它们独特的电学行为非常重要。然而，表面氧化问题使得很难通过 X 射线光电子能谱 (XPS) 获得准确的价带结构。在本文中，使用单原子和簇离子蚀刻的组合进行 XPS 深度剖面，以确定覆盖有薄碳层的非晶 Ge-Se 膜的价带结构。取决于深度分布中的成分的完全不同的蚀刻行为可能与非晶膜的本征键配置密切相关。获得新鲜表面后，非晶 Ge-Se 样品的本征价带结构表现出不同的键合行为和短程结构。最重要的是，非晶 Ge 的费米能级x Se 100- x化合物也被确定。
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