Undoped and antimony (Sb) doped ZnO films were synthesized on sapphire (0001) substrates using Pulsed Laser Deposition (PLD) method. Structural and morphological studies proved the good crystallinity of the ZnO films with c-axis (0002) orientation growth. The substitution of Sb in ZnO lattice was proved from the analysis of XPS data. Interestingly, it was important that the presence of Sb⁵⁺ ions opened the way for the apparition of the complex acceptor (Sb_Zn–2V_Zn) level with high stability. The decrease in the value of the band gap Eg with Sb doping evidenced the creation of energy levels related to such complex acceptor. From the study of photoluminescence (PL) at low temperatures, it was shown the dominant emission is related to free electron transition from neutral acceptor (e, A₀), indicating the conductivity conversion from n to p with Sb doping. The reproducibility and stability of p-type conduction from the ZnO:Sb3% films were evaluated by Hall measurements. As application, ZnO homojunction device was carefully made and shows rectifying current-voltage (I–V) characteristics, typical to perfect diode. Thus, the prepared ZnO–Sb films are promising for application in optoelectronic field.

使用脉冲激光沉积（PLD）方法在蓝宝石（0001）衬底上合成了未掺杂和锑（Sb）掺杂的ZnO薄膜。结构和形态研究证明，具有c轴（0002）取向生长的ZnO薄膜具有良好的结晶度。通过XPS数据分析证明了ZnO晶格中Sb的取代。有趣的是，重要的是，Sb ⁵⁺离子的存在为复合受体（Sb _Zn –2V _Zn）水平具有很高的稳定性。带Sb掺杂的带隙Eg值的降低证明了与这种复杂受体有关的能级的产生。从低温下的光致发光（PL）的研究表明，主要发射与中性受体的自由电子跃迁有关（e，A ₀），表明在Sb掺杂下电导率从n转换为p。通过霍尔测量法评估了ZnO：Sb3％膜的p型传导的可再现性和稳定性。在实际应用中，精心制作了ZnO同质结器件，并表现出整流电流-电压（IV）特性，这是完善二极管所特有的。因此，制备的ZnO-Sb薄膜有望用于光电子领域。