The atomic layer deposition (ALD) growth of ZnO on n-SiC/p-Si heterojunction was carried out and the current transport mechanism of ZnO/n-SiC/p-Si heterojunction was investigated. The current–voltage (I–V) characteristics for n-SiC/p-Si heterojunction showed the normal p-n junction properties, which became reversal for n-ZnO/n-SiC/p-Si heterojunction. The Arrhenius plots of reverse currents versus 1/kT produced the activation energies of 0.42 and 0.21 eV for n-SiC/p-Si and n-ZnO/n-SiC/p-Si heterojunctions, respectively. The decrease of current values with the temperature for n-ZnO/n-SiC/p-Si heterojunction would be due to the interface states near the ZnO/SiC interface. Capacitance–voltage (C–V) characteristics revealed the higher interface state density for n-ZnO/n-SiC/p-Si heterojunction.

在n-SiC / p-Si异质结上进行了ZnO的原子层沉积（ALD）生长，研究了ZnO / n-SiC / p-Si异质结的电流传输机理。的电流-电压（我- V）为正的SiC / P-Si异质特性显示正常pn结特性，这成为对于n-ZnO系/正碳化硅/ P-Si异质逆转。反向电流对1 / kT的Arrhenius曲线分别产生了n-SiC / p-Si和n-ZnO / n-SiC / p-Si异质结的激活能0.42和0.21 eV。n-ZnO / n-SiC / p-Si异质结的电流值随温度的降低将归因于ZnO / SiC界面附近的界面状态。电容电压（C – V）特性揭示了n-ZnO / n-SiC / p-Si异质结的界面态密度更高。