We theoretically investigate and optimize four-wave mixing (FWM) in silicon nitride (SiN) waveguides integrated with 2D layered graphene oxide (GO) films. Based on extensive previous measurements of the material parameters of the GO films, we perform detailed analysis on the influence of device parameters including waveguide geometry, GO film thickness, length, and coating position, on the FWM conversion efficiency (CE) and conversion bandwidth (CB). The influence of dispersion and photo-thermal changes in the GO films is also discussed. Owing to the strong mode overlap between the SiN waveguides and the highly nonlinear GO films, FWM in the hybrid waveguides can be significantly enhanced. We obtain good agreement with previous experimental results and show that by optimizing the device parameters to balance the trade-off between Kerr nonlinearity and loss, the FWM CE can be improved by as much as ∼20.7 dB and the FWM CB can be increased by ∼4.4 folds, relative to the uncoated waveguides. These results highlight the significantly enhanced FWM performance that can be achieved in SiN waveguides by integrating 2D layered GO films.

中文翻译：

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集成了二维分层氧化石墨烯膜的氮化硅波导中的四波混频分析

我们从理论上研究和优化了集成有2D层氧化石墨烯（GO）膜的氮化硅（SiN）波导中的四波混频（FWM）。基于先前对GO膜材料参数的广泛测量，我们对器件参数（包括波导几何形状，GO膜厚度，长度和涂层位置）对FWM转换效率（CE）和转换带宽（ CB）。还讨论了GO薄膜中色散和光热变化的影响。由于SiN波导和高度非线性的GO薄膜之间存在强模式重叠，因此可以显着增强混合波导中的FWM。我们与先前的实验结果取得了很好的一致性，并且表明，通过优化器件参数以平衡Kerr非线性和损耗之间的折衷，FWM CE可以提高约20.7 dB，而FWM CB可以提高约〜相对于未涂覆的波导为4.4倍。这些结果表明，通过集成2D分层GO膜，可以在SiN波导中显着提高FWM性能。