The diamond-like carbon (DLC) is important for passivation of junction termination in high power devices due to its excellent electrical, mechanical, and thermal properties. While the role of conductivity and polarization of the DLC layer on the blocking capability of a p-n junction has been explained recently, the thermal behavior still needs to be addressed. For this purpose, the diode leakage current was measured on large area power diodes with negative bevel coated by the DLC in a typical industrial range between 300 and 413 K. An unusual deviation from the expected Arrhenius law was experimentally observed. A predictive TCAD model, which incorporates the effect of the DLC layer, has been developed to study the impact of the DLC layer parameters on diode thermal performance. Both the electrostatic features and charge transport mechanisms through and along the DLC/Silicon interface have been modeled over a wide range of temperatures. Different DLC/Silicon doping combinations have been analyzed to explain the main effects determining the temperature dependence of diode leakage current and breakdown voltage. A complete validation of the TCAD approach has been achieved.

中文翻译：

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在扩展温度范围内，DLC钝化电导率对硅大功率二极管性能的影响

类金刚石碳（DLC）由于其出色的电气，机械和热性能，对于钝化高功率器件中的结终端非常重要。虽然最近已经解释了DLC层的电导率和极化对pn结的阻挡能力的作用，但仍然需要解决热行为。为此，在具有300°C到413K的典型工业范围内的DLC涂有负斜角的大面积功率二极管上测量了二极管泄漏电流。通过实验观察到了与预期的阿伦尼乌斯定律的不寻常偏离。已开发出一种预测性TCAD模型，该模型结合了DLC层的影响，以研究DLC层参数对二极管热性能的影响。通过和沿着DLC /硅界面的静电特征和电荷传输机制均已在很宽的温度范围内进行了建模。分析了不同的DLC /硅掺杂组合，以解释决定二极管泄漏电流和击穿电压与温度的关系的主要影响。TCAD方法已得到完整验证。