Periodic V-grooves channels, upright, and inverted pyramids structures were texturized on monocrystalline silicon (c-Si) substrates using ammonium hydroxide (NH4OH) solution. This cheap and CMOS compatible etching solution aims at the integration of circuits with photovoltaic (PV) cells for monolithic purposes. To obtain these structures, lithographed silicon dioxide (SiO2) patterns were used to delimit the c-Si surface regions to be etched by the NH4OH solution. After the SiO2 removal, a scanning electron microscopy images of the surface of the samples showed that the NH4OH etch exposed the <;111> facets, outlined by the SiO2 patterns, creating periodic V-groove channels, inverted, and upright pyramids structures with depths of 5.9 ± 0.1, 5.7 ± 0.4, and height of 6.9 ± 0.1 μm, respectively. These ordered structures reduced a polished c-Si control sample reflectance by 57.6 ± 0.1%, 53.3 ± 0.1%, and 51.6 ± 0.1%, measured by a spectrophotometer with integrating sphere and having reflectance values of 16.5%, 18.2%, and 18.9%, respectively. These results indicate that the etched periodic structures using a cheap and CMOS compatible NH4OH solution, increases the c-Si light trapping, by reducing its reflectance for values lower than 20%, which could be used to increase the light absorption on PV cells.

中文翻译：

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周期性 V 形槽通道、直立和倒金字塔结构的 NH4OH-B 硅织构


使用氢氧化铵 (NH4OH) 溶液在单晶硅 (c-Si) 基板上对周期性 V 形槽通道、直立和倒金字塔结构进行纹理化。这种廉价且 CMOS 兼容的蚀刻解决方案旨在将电路与光伏 (PV) 电池集成以实现单片用途。为了获得这些结构，使用光刻二氧化硅 (SiO2) 图案来界定要被 NH4OH 溶液蚀刻的 c-Si 表面区域。去除 SiO2 后，样品表面的扫描电子显微镜图像显示，NH4OH 蚀刻暴露了 <;111> 面，由 SiO2 图案勾勒出轮廓，形成周期性 V 形槽通道、倒置和直立金字塔结构深度分别为5.9±0.1、5.7±0.4、高度为6.9±0.1μm。这些有序结构使抛光 c-Si 对照样品的反射率降低了 57.6 ± 0.1%、53.3 ± 0.1% 和 51.6 ± 0.1%（通过带有积分球的分光光度计测量，反射率值为 16.5%、18.2% 和 18.9%） ， 分别。这些结果表明，使用廉价且 CMOS 兼容的 NH4OH 溶液蚀刻的周期性结构通过将其反射率降低至低于 20% 来增加 c-Si 光捕获，这可用于增加 PV 电池的光吸收。