This study presents a high-precision, ultra-low-power, and CMOS-only subthreshold voltage reference. V_PTAT with a positive temperature coefficient (TC) and V_CTAT with a negative TC were generated to obtain a low-temperature dependence voltage reference. V_PTAT was implemented using two standard-threshold voltage (STV) transistors working in the subthreshold region, while, V_CTAT was implemented by a high-threshold-voltage (HTV) transistor and an STV transistor biased in the subthreshold region to obtain a ΔV_GS with a negative TC. The voltage reference circuit was implemented via a standard 0.18-μm CMOS process with the core size around 0.022 mm². The pre and post simulation results showed an average output reference voltage of around 235 mV with different supply voltages. Under a temperature range of −30 to 80 °C and the supply voltage of 0.55 V, the best TCs were as low as 2.1 and 7.6 ppm/°C for pre and post simulations, respectively. The total power consumption was only 5.6 nW when the supply voltage is 0.55 V.

这项研究提出了一种高精度，超低功耗且仅CMOS的亚阈值电压基准。生成具有正温度系数（TC）的V _PTAT和具有负TC的V _CTAT，以获得低温相关电压基准。V _PTAT使用在亚阈值区域中工作的两个标准阈值电压（STV）晶体管实现，而V _CTAT由高阈值电压（HTV）晶体管和偏置在亚阈值区域中的STV晶体管实现，以获得ΔV _GS负TC。电压参考电路是通过一个标准的0.18实施μ中号CMOS工艺，周围0.022毫米磁芯尺寸²。仿真前后的结果表明，在不同电源电压下，平均输出参考电压约为235 mV。在−30至80°C的温度范围内以及0.55 V的电源电压下，模拟前后的最佳TC分别低至2.1和7.6 ppm /°C。当电源电压为0.55 V时，总功耗仅为5.6 nW。