The dependence of electron transport properties of two-dimensional electron gas on sheet doping concentration in one-sided δ-doped pseudomorphic Al_xGa_1-xAs/In_0.2Ga_0.8As/GaAs quantum wells is investigated. The wide range of silicon dopant sheet concentrations of (1.6–16) · 10¹² cm⁻² is investigated. Electron effective masses, nonparabolicity and scattering times are determined by low-temperature Shubnikov-de Haas effect measurements. The dependence of the quantum and transport relaxation times on n_H is shown to have nonmonotonic character due to the competition of the Fermi momentum increase and the large angle scattering due to the variation of ionized donor concentration. The nonparabolicity coefficient in the In_0.2Ga_0.8As quantum well is determined to be 0.68 1/eV.

研究了二维电子气的电子输运特性对单晶δ掺杂拟晶Al _x Ga _1-x As / In _0.2 Ga _0.8 As / GaAs量子阱中片掺杂浓度的依赖性。研究了（1.6–16）·10 ¹²  cm ^-2的宽范围硅掺杂剂片浓度。电子有效质量，非抛物线性和散射时间由低温Shubnikov-de Haas效应测量确定。量子弛豫时间与n _H的依赖关系由于费米动量增加的竞争和电离施主浓度的变化而引起的大角度散射，具有非单调性。In _0.2 Ga _0.8 As量子阱中的非抛物线系数确定为0.68 1 / eV。