STO has been studied for many years and is mainly used in various fields such as ceramic capacitors, memristors and solar cells. The influence of oxygen vacancies on its physical properties is very important. In this article, we report the dielectric, impedance and current-voltage characteristics of STO ceramic at different temperatures. When the temperature is increased, the oxygen vacancy concentration of the STO ceramic increases, resulting in dielectric dispersion and dielectric relaxation behavior. In the analysis of impedance spectroscopy, oxygen vacancies mainly undergo secondary ionization and conduct grain conduction within the STO. The conductivity of STO ceramic increases with increasing temperature, mainly due to the increase in oxygen vacancy concentration. The STO ceramic at high temperature exhibits a current-voltage characteristic curve similar to the resistive switching effect, due to the migration of oxygen vacancies.

STO已经研究了很多年，主要用于陶瓷电容器，忆阻器和太阳能电池等各个领域。氧空位对其物理性质的影响非常重要。在本文中，我们报告了不同温度下STO陶瓷的介电常数，阻抗和电流-电压特性。当温度升高时，STO陶瓷的氧空位浓度增加，导致电介质分散和电介质弛豫行为。在阻抗谱分析中，氧空位主要经历二次电离并在STO内传导晶粒传导。STO陶瓷的电导率随温度升高而增加，这主要是由于氧空位浓度的增加所致。