The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~10⁷ wires/cm²), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).

氮化镓 (GaN) 纳米线发光二极管 (nanoLED) 在柔性基板上的集成为刚性固态照明之外的应用（例如，用于可穿戴光电器件和可弯曲无机显示器）提供了机会。在这里，我们报告了一种基于飞秒激光剥离（ fs -LLO）的快速物理转移路线，以在非常规平台上实现晶圆级自上而下的GaN纳米LED阵列。结合光刻和混合蚀刻工艺，我们成功地将GaN蓝色纳米LED从完整的两英寸蓝宝石基板转移到柔性铜（Cu）箔上，具有高纳米线密度（〜10 ⁷线/cm ² ），转移良率（〜99.5） %) 和重现性。进行了各种纳米分析测量，以评估fs -LLO 技术的性能和局限性，并深入了解物理材料特性（例如应变松弛）并评估转移过程的成熟度。这项工作可以实现原生生长衬底的轻松回收，并通过仅采用标准外延 LED 晶圆（即不需要额外嵌入牺牲材料的定制 LED 晶圆和复杂的生长工艺）来激发大规模混合 GaN 纳米线光电器件的开发）。