Ferroelectric Aluminum Scandium Nitride Thin Film Bulk Acoustic Resonators with Polarization‐Dependent Operating States,Physica Status Solidi-Rapid Research Letters

当前位置： X-MOL 学术 › Phys. Status Solidi. Rapid Res. Lett. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Ferroelectric Aluminum Scandium Nitride Thin Film Bulk Acoustic Resonators with Polarization‐Dependent Operating States
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-04-23 , DOI: 10.1002/pssr.202100034
Jialin Wang ₁ , Yue Zheng ₁ , Azadeh Ansari ₁

Affiliation

Given the recent discovery of ferroelectricity in highly doped AlN films and their widespread use in bulk acoustic wave (BAW) filters, the ferroelectric and acoustic performance of AlScN‐based devices at two distinct polarization states, i.e., nitrogen (N)‐polar and metal‐polar states, is investigated. Unreleased metal−ferroelectric−metal (MFM) capacitors, as well as suspended MFM structures in the form of thin‐film bulk acoustic resonators (FBARs), are fabricated based on Mo/AlScN/Mo‐sputtered films with ≈30% Sc concentration. The hysteresis polarization−electric field (P−E) loops and internal resistance of the MFM capacitors are characterized. The FBAR devices are characterized at the two polarization states, where the polarization inversion is accompanied by the modulation of thin‐film stress and resistance. Furthermore, the as‐fabricated N‐polar FBAR shows a fundamental thickness‐mode resonance frequency of 3.17 GHz, with a quality factor (Q_Bode) of 572 and a high effective electromechanical coupling coefficient (k_t²) of 11.4%. The FBAR frequency response changes when the polarization is switched from N‐polar to metal‐polar. Herein, the first investigations of electric and acoustic properties of N‐polar and metal‐polar AlScN‐based devices are demonstrated, paving the way for the realization of high‐k_t²‐reconfigurable acoustic filters for next‐generation communication systems operating at the super‐high‐frequency (SHF) range.

中文翻译：

具有极化相关工作状态的铁电氮化铝Aluminum薄膜体声谐振器

鉴于最近在高掺杂AlN薄膜中发现铁电并已在体声波（BAW）滤波器中广泛使用，基于AlScN的设备在两种不同的极化状态（即氮（N）-极性和金属）下的铁电和声学性能研究极性状态。未释放的金属铁电金属（MFM）电容器以及薄膜体声波谐振器（FBAR）形式的悬浮MFM结构是基于Mo / AlScN / Mo溅射薄膜制成的，其Sc浓度约为30％。滞后极化-电场（P-E表征了MFM电容器的环路和内部电阻。FBAR器件的特征是处于两个极化状态，其中极化反转伴随着薄膜应力和电阻的调制。此外，制成的N极FBAR的基本厚度模式共振频率为3.17 GHz，品质因数（Q _Bode）为572，有效的机电耦合系数（k _t²）为11.4％。当极化从N极性切换到金属极性时，FBAR频率响应会发生变化。本文展示了对基于N极性和金属极性AlScN的器件的电学和声学特性的首次研究，为实现高绝缘性铺平了道路。k _t^2可重新配置的声滤波器，用于在超高频（SHF）范围内运行的下一代通信系统。

更新日期：2021-05-17

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11