We demonstrate a nanometer-scale ordered arrangement of diamond nanoparticles (DNPs) on SiO₂ surfaces via the technique of electrostatic deposition. Using the lift-off process combining electron beam lithography and surface functionalization with 3-aminopropyltriethoxysilane, the negative zeta potential of SiO₂ surfaces are locally inversed to positive. Consequently, the DNPs are deposited on the limited SiO₂ surface areas with ≥100nm pitch line-and-space and dot array patterns where the electrostatic attractive interaction works. Since this approach does not rely on any specific material property other than zeta potential, it would be applicable to any material combination of charged nanoparticles and substrates.

我们通过静电沉积技术在 SiO ₂表面上展示了金刚石纳米颗粒 (DNP) 的纳米级有序排列。使用结合电子束光刻和表面功能化与 3-氨基丙基三乙氧基硅烷的剥离工艺，SiO ₂表面的负 zeta 电位局部反转为正。因此，DNPs 沉积在有限的 SiO ₂表面区域，具有≥100nm 间距的线间距和点阵列图案，静电吸引相互作用起作用。由于这种方法不依赖于 zeta 电位以外的任何特定材料特性，因此它适用于带电纳米粒子和基板的任何材料组合。