The polycrystalline samples of gadolinium (Gd)-modified lead-zirconate-titanate (\(\hbox {Pb}_{\mathrm {1-}{x}}\hbox {Gd}_{x}\) (\(\hbox {Zr}_{\mathrm {0.52}}\hbox {Ti}_{\mathrm {0.48}})_{\mathrm {1-}{x}\mathrm{/4}} \hbox {O}_{\mathrm {3}})\) (\(x = 0, 0.07, 0.10\) and 0.12) (PGZT) ceramics near morphotropic phase boundary (MPB) were prepared by high-temperature solid-state reaction route. Electrical properties such as impedance (Z), modulus (M) and conductivity (\(\upsigma \)) of the materials have been investigated within a wide range of temperature and frequency. Complex impedance spectroscopy (CIS) studies show that materials exhibit bulk (grain) resistive contributions, negative temperature coefficient of resistance (NTCR) and non-Debye-type dielectric relaxation. The nature of temperature and frequency dependence of conductivity follows Jonscher’s universal power law. J–E characteristics reveal that the materials exhibit semiconducting behaviour and allow a very small leakage current to pass through them.

ado（Gd）修饰的锆钛酸铅（\（\ hbox {Pb} _ {\ mathrm {1-} {x}} \ hbox {Gd} _ {x} \）（\（\ hbox {Zr} _ {\ mathrm {0.52}} \ hbox {Ti} _ {\ mathrm {0.48}}）_ {\ mathrm {1-} {x} \ mathrm {/ 4}} \ hbox {O} _ {\ mathrm {3}}）\）（\（x = 0，0.07，0.10 \）和0.12）（PGZT）通过高温固态反应路线制备了接近变质相界（MPB）的陶瓷。电气特性，例如阻抗（Z），模量（M）和电导率（\（\ upsigma \））的材料已在很宽的温度和频率范围内进行了研究。复阻抗谱（CIS）研究表明，材料表现出大体积（晶粒）电阻贡献，负电阻温度系数（NTCR）和非德拜型介电弛豫。温度和电导率的频率依赖性的性质遵循Jonscher的通用幂定律。J – E特性表明，这些材料表现出半导体性能，并允许很小的漏电流通过它们。