We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10 −3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

中文翻译：

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非对称Ge / SiGe耦合量子阱调制器

我们设计并演示了用于硅光子集成中具有低偏置电压的强度和相位调制的非对称Ge / SiGe耦合量子阱（CQW）波导调制器。由两个具有不同宽度的量子阱组成的不对称CQW被用作有源区，以通过控制波函数的耦合来增强器件的电光特性。所制造的器件可以在1446 nm处实现5 dB的消光比，并在1530 nm处实现1.4×10 -3的电折射率变化，并且在1 V反向偏压下具有0.055 V cm的相关调制效率VπLπ。高频响应的3 dB带宽在1 V偏置下为27 GHz，每位能耗小于100 fJ / bit。拟议中的设备提供了通往低电压，低能耗，