Herein, the direct growth of polar orthorhombic phase in Hf_0.5Zr_0.5O₂ (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which allows the formation of smaller crystallites (~9.7 nm) with large surface energy leading to the stabilization of metastable orthorhombic phase. Unlike atomic layer deposition (ALD) of HZO, PLD is more advantageous for depositing highly crystalline thin films through optimized parameters, such as laser fluence and background gas pressure. Further, the PLD-HZO is integrated with HfO₂ dielectric and the resulting gate stacks have been used in the bottom gate FET architecture-‘Si//PLD-HZO/HfO₂/MoS₂//Ti/Au’. The NCFETs have yielded a sub-thermionic subthreshold swing (SS_for = 33.03 ± 8.7 mV/dec. and SS_rev = 36.4 ± 7.7 mV/dec.) and a negligible hysteresis (~28 mV), which is capable in realizing low power integrated digital/analog circuits.

在此，报道了使用脉冲激光沉积（PLD）在Hf _0.5 Zr _0.5 O ₂（HZO）薄膜中极性正交相的直接生长。HZO在预热（700°C）的硅基板上的生长模仿了快速热退火，从而允许形成具有较大表面能的较小的微晶（〜9.7 nm），从而导致亚稳正交晶相的稳定化。与HZO的原子层沉积（ALD）不同，PLD对于通过优化的参数（例如激光通量和背景气压）沉积高度结晶的薄膜更为有利。此外，PLD -HZO与HfO ₂集成在一起在底栅FET架构-'Si // PLD -HZO / HfO ₂ / MoS ₂ // Ti / Au'中已使用了电介质和所得的栅极叠层。NCFET产生了亚热电子亚阈值摆幅（SS_为 = 33.03±8.7 mV / dec。和SS _rev  = 36.4±7.7 mV / dec。）和可忽略的磁滞（〜28 mV），能够实现低功耗集成数字/模拟电路。