We measured the stress in a Si chip mounted on a Cu plate using Raman spectroscopy and compared the results with those calculated by using the finite element method (FEM). The difference in the stress observed at the vicinity of the chip edge was approximately 30 MPa, and the simulated value was smaller than that observed using Raman spectroscopy. We found that the difference occurred owing to the absence of the “filet” structure generated from the epoxy adhesive, and we subsequently modified the simulation model. The modified FEM results were in good agreement with the measured results. These results indicated that the “filet” structure, which was not the main structure of die-bonding, played an important role in residual stress formation. Feedback using Raman measurements is crucial, and we evaluated the stress in electronic devices with high accuracy by combining FEM with Raman microprobe measurements. In cross-sectional measurements, we observed discrepancy between the results, and the difference in the vertical stress was found to be dependent on excitation laser wavelength. Except for the discrepancy near the backside, the Raman results were in good agreement with the FEM results. This indicated that Raman spectroscopy can evaluate the stress components in the Si cross-section, and full three-dimensional stress in the packaging devices can be determined by combining FEM with cross-sectional Raman measurements, even if the internal stress is relaxed via cutting.

我们使用拉曼光谱法测量了安装在Cu板上的Si芯片中的应力，并将结果与​​使用有限元方法（FEM）计算的结果进行了比较。在芯片边缘附近观察到的应力差约为30 MPa，模拟值小于使用拉曼光谱法观察到的值。我们发现差异的产生是由于环氧胶粘剂不产生“菲力特”结构，因此我们修改了仿真模型。修改后的有限元结果与实测结果吻合良好。这些结果表明，不是芯片键合的主要结构的“菲力特”结构在残余应力的形成中起着重要作用。使用拉曼测量的反馈至关重要，我们通过结合有限元分析和拉曼显微探针测量，以高精度评估了电子设备中的应力。在横截面测量中，我们观察到结果之间的差异，并且发现垂直应力的差异取决于激发激光波长。除了背面附近的差异外，拉曼结果与有限元结果非常吻合。这表明拉曼光谱可以评估Si截面中的应力分量，并且即使通过切割来释放内部应力，也可以通过将FEM与截面拉曼测量值相结合来确定包装装置中的完整三维应力。发现垂直应力的差异取决于激发激光的波长。除了背面附近的差异外，拉曼结果与有限元结果非常吻合。这表明拉曼光谱可以评估Si横截面中的应力分量，并且即使通过切割松弛内部应力，也可以通过将FEM与横截面拉曼测量值相结合来确定包装设备中的完整三维应力。发现垂直应力的差异取决于激发激光的波长。除了背面附近的差异外，拉曼结果与有限元结果非常吻合。这表明拉曼光谱可以评估Si横截面中的应力分量，并且即使通过切割松弛内部应力，也可以通过将FEM与横截面拉曼测量值相结合来确定包装设备中的完整三维应力。