Abstract—

The effect of low-temperature annealing on the capacity–voltage and current–voltage characteristics of silicon-carbide-based semiconductor devices irradiated with 0.9-MeV electrons and 25-MeV protons are studied. Commercial high-voltage (a blocking voltage of 1700 V) integrated 4H-SiC Schottky diodes are used. It is established for the first time that, for both types of irradiation used, not only well-known thermally stable Z1/Z2 and EH6/7 radiation defects compensating the electrical conductivity of n-SiC, but also a second group of radiation defects also creating deep levels in the forbidden band of the semiconductor, but annealed at relatively low (400°С) temperatures are introduced into n-SiC.

中文翻译：

---

低温退火在带电粒子束改性碳化硅中的作用

摘要-

研究了低温退火对0.9MeV电子和25MeV质子辐照的碳化硅基半导体器件的容量-电压和电流-电压特性的影响。使用商用高压（1700 V的阻断电压）集成的4H-SiC肖特基二极管。首次确定，对于所使用的两种辐射类型，不仅众所周知的热稳定的Z1 / Z2和EH6 / 7辐射缺陷可以补偿n -SiC的导电性，而且还可以建立第二组辐射缺陷在半导体的禁带中产生较深的能级，但是在相对较低的温度（400°C）下退火的材料被引入到n -SiC中。