Abstract

Cd_0.6Ba_0.4S nanostructures are obtained by the implantation of Ba⁺ ions and subsequent annealing on the surface and in the surface region of CdS films. The parameters of the energy bands and the density of electronic states in the valence band are determined. With a decrease in the surface dimensions of the nanocrystalline phases of Cd_0.6Ba_0.4S from 30 to 15 nm, the band gap E_g is shown to increase from 2.3 to 2.6 eV. The band gap E_g of the Cd_0.6Ba_0.4S nanofilms and nanolayers is 2.1 eV.

中文翻译：

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通过注入Ba +离子在CdS膜的表面和近表面区域制备Cd–Ba–S纳米结构

摘要

Cd _0.6 Ba _0.4 S纳米结构是通过注入Ba ⁺离子并随后在CdS膜的表面和表面区域进行退火而获得的。确定能带的参数和价带中电子态的密度。随着Cd _0.6 Ba _0.4 S纳米晶相的表面尺寸从30 nm减小到15 nm，带隙E _g从2.3 eV增大到2.6 eV。Cd _0.6 Ba _0.4 S纳米膜和纳米层的带隙E _g为2.1 eV。