Abstract

Secondary ion mass spectrometry is used to study the emission of negative ions from clusters of gallium, gallium nitride, and GaN/SiC dopants depending on the energy of the bombarding cesium ions, as well as on the substrate temperature. The emission of negative ions of clusters is shown to exponentially depend on the energy of bombarding ions in the threshold sputtering region, which confirms the recombination mechanism of cluster sputtering in this energy region. Gallium clustering indicates the formation of gallium-nitrogen divacancies during doping. The results of studying the dependence of the yield of atomic and cluster ions on the temperature of gallium nitride during bombardment with \({\text{C}}{{{\text{s}}}^{ + }}\) ions show that that there occurs the co-segregation of carbon and oxygen impurities.

中文翻译：

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铯离子轰击下GaN / SiC团簇二次离子发射的能量和温度依赖性

摘要

二次离子质谱法用于研究镓，氮化镓和GaN / SiC掺杂物簇中负离子的发射，具体取决于轰击铯离子的能量以及衬底温度。簇的负离子的发射被显示成指数地取决于阈值溅射区域中轰击离子的能量，这证实了簇溅射在该能量区域中的复合机理。镓聚集表明在掺杂过程中形成了镓-氮双空位。研究用\（{{text {C}}} {{{{\ text {s}}} ^ {+}} \）离子轰击过程中原子和簇离子的产率对氮化镓温度的依赖性的结果结果表明存在碳和氧杂质的共离析。