Abstract

Nanophases and films of SiO₂ and metal silicides are obtained by the low-energy (E₀ = 1–5 keV) implantation of \({\text{O}}_{{\text{2}}}^{{\text{ + }}},\) Ba⁺, Cu⁺ and Co⁺ ions followed by annealing on the surface of a free Si/Cu (100) nanofilm system. Their surface morphology, composition, energy-band parameters, the maximum value of the secondary-electron-emission coefficient, and the quantum yield of photoelectrons are determined. It is shown that the band gap of metal silicides is 0.3–0.4 eV, and their specific resistance is 100–500 µOhm cm.

中文翻译：

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在自由Si / Cu膜系统表面形成的纳米结构的电子结构和性质

摘要

纳米相和SiO的膜₂（以及金属硅化物是通过低能量得到Ë ₀的= 1-5千电子伏）注入\（{\文本{ö}} _ {{\文本{2}}} ^ {{\文本{+}}}，\） Ba ⁺，Cu ⁺和Co ⁺离子，然后在自由的Si / Cu（100）纳米膜系统的表面上进行退火。确定它们的表面形态，组成，能带参数，二次电子发射系数的最大值以及光电子的量子产率。结果表明，金属硅化物的带隙为0.3–0.4 eV，比电阻为100–500 µOhm cm。