In this paper, a simulation model of p type PiN high voltage pulse open switch is established. The switch operates in “punch through” mode, with a 4 kA/cm² cut-off current density and sub-nanosecond cut-off speed. The cut-off process of switch can be divided into three stages, that is, non-equilibrium carriers extraction stage, majority carriers drift stage and charging stage of junction capacitance by change of internal electric field and carrier concentration. Keeping injection current and cut-off current as 20 A and 40 A, the switch cut-off speed and “pedestal” voltage are reciprocally determined. Thus, optimizing the doping concentration and thickness of p layer is a valid solution for the actual system design.

中文翻译：

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亚纳秒碳化硅PiN开关截止特性研究

本文建立了一个仿真模型p建立了PiN型高压脉冲打开开关。该开关以“穿通”模式运行，截止电流密度为 4 kA/cm ²，截止速度为亚纳秒级。开关的截止过程可分为三个阶段，即非平衡载流子提取阶段、多数载流子漂移阶段和通过内部电场和载流子浓度的变化对结电容充电阶段。保持注入电流和截止电流分别为 20 A 和 40 A，开关截止速度和“基座”电压相互确定。因此，优化掺杂浓度和厚度p层是实际系统设计的有效解决方案。