CrTaN coatings were deposited by cathodic arc evaporation and the influence of the bias voltage on the microstructure, mechanical properties and thermal stability was investigated. Independent of the applied bias voltage (−40, −60 and −80 V), all coatings crystallize in an fcc-Cr_0.74Ta_0.26N solid solution, while in contrast a significant influence on the residual stress and grain size was observed. Hardness, Young's modulus and fracture toughness of the as-deposited coatings are enhanced by an increasing bias voltage due to grain refinement and higher compressive residual stress. Powdered CrTaN coatings are stable in inert atmosphere up to ~1200 °C, where the formation of h-Cr₂N, bcc-Cr and h-TaN_0.8 provokes N₂ release. An annealing treatment at 1000 °C for 15 min does not affect the phase composition of the coatings on cemented carbide. Annealing the samples however at 1000 °C for 2 h induces a reaction between coating and cemented carbide substrate, which results in the formation of fcc-TaC and h-Cr₂N. As the bias voltage increases, the thermal stability of coating powders and the solid CrTaN coatings on cemented carbide substrates decreases. The lower thermal stability with increasing bias voltage can be attributed to the smaller grain size and thus higher number of diffusion pathways.

通过阴极电弧蒸发沉积CrTaN涂层，研究了偏压对组织，力学性能和热稳定性的影响。与所施加的偏置电压（−40，−60和−80 V）无关，所有涂层均在fcc-Cr _0.74 Ta _0.26 N固溶体中结晶，而与此相反，观察到了对残余应力和晶粒尺寸的显着影响。由于晶粒细化和较高的压缩残余应力而增加的偏置电压可提高沉积态涂层的硬度，杨氏模量和断裂韧性。粉末状的CrTaN涂层在惰性气氛中可保持稳定，最高温度可达1200°C，其中h-Cr ₂ N，bcc-Cr和h-TaN _0.8的形成会激发N _2。释放。在1000°C下进行15分钟的退火处理不会影响硬质合金上涂层的相组成。然而退火样品在1000℃下2个小时诱导和硬质合金基体涂覆之间的反应，其结果在FCC-TAC和h-Cr的形成₂ N.作为偏置电压的增加，涂层粉末的热稳定性和硬质合金基体上的CrTaN固体涂层减少。随着偏置电压的增加，较低的热稳定性可归因于较小的晶粒尺寸，并因此具有较高数量的扩散路径。