The effect of high-temperature irradiation with 15 MeV protons on the parameters of high-voltage 4H-SiC Schottky diodes has been studied at irradiation temperatures of 23–500 °C and doses in the range from 7 × 10¹³ to 2 × 10¹⁴ cm⁻². After the irradiation with a dose of 10¹⁴ cm⁻² at room temperature, the forward current at a forward voltage U = 2 V decreases by ~10 orders of magnitude. In this case, the cutoff voltage U_c, equal to ~0.6 V in unirradiated devices, decreases to U_c ≈ 0.35 V. By contrast, irradiation with the same dose at a temperature of 500 °C leads to an increase in U_c up to U_c ≈ 0.8 V. At the same reference value of the forward voltage U = 2 V, the decrease in current, compared to the value in unirradiated devices, was smaller by ~4 orders of magnitude. In the entire range of doses and irradiation temperatures under study, the forward current–voltage characteristic of diodes at U > U_c is linear up to U ≤ 2 V.

已经研究了在23–500°C的辐照温度和7×10 ¹³至2×10 ^14的剂量范围内，用15 MeV质子高温辐照对高压4H-SiC肖特基二极管的参数的影响。厘米^-2。在室温下以10 ¹⁴ cm ^-2的剂量辐照之后，在正向电压U  = 2 V时的正向电流减小〜10个数量级。在这种情况下，截止电压ü _Ç，等于〜在未照射装置0.6 V，减小到û _Ç在500℃下引线的温度≈0.35 V.相反，照射用相同剂量的增加ù_Ç高达û _ç ≈0.8 V.在正向电压的相同的参考值Ù  = 2 V，在电流的减小，相对于在未经照射的设备的值，是由〜4个数量级的小。在所研究的剂量和辐照的整个温度范围内，在二极管的正向电流-电压特性ù  >  û _Ç是线性高达û  ≤2 V.