In this work, a negative capacitance tunnel FET (NCTFET) with the tunneling current in the normal direction to the gate is proposed with channel doping engineering and its electrical characteristics are investigated using TCAD simulations with calibrated model parameters. The new NCTFET has a p ⁺ -doping (for n-type operations) in the channel overlap region, which plays a role to suppress the corner (source edge) band-to-band tunneling (BTBT) that degrades the on/off transition. By optimizing the doping concentration of the channel overlap region ( N _CH,OV ), the on-current gets ∼3.5 times enhanced and the averaged subthreshold swing ( SS _AVE ) becomes reduced from 82.5 mV/dec to 43.9 mV/dec. Furthermore, the effects of epi-channel thickness ( T _CH ) and source overlap length ( L _S,OV ) variations are analyzed by simulating 2D contour BTBT generation rates and electron densities. With the optimized device parameters (4 nm T _CH and 35 nm L _S,OV ), the on-current is additionally ∼1.6 times improved without the SS and the ambipolar current degradations.

中文翻译：

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带有沟道掺杂工程的栅极法向负电容隧道场效应晶体管（TFET）

在这项工作中，通过沟道掺杂技术提出了一种负电容隧道FET（NCTFET），其隧穿电流在垂直于栅极的方向上进行，并使用带有校准模型参数的TCAD仿真研究了其电特性。新的NCTFET 在沟道重叠区具有ap ⁺掺杂（用于n型操作），其作用是抑制拐角（源极边缘）的带间隧穿（BTBT），从而降低了导通/截止过渡。通过优化沟道重叠区的掺杂浓度（ ñ _CH，OV ），导通电流提高约3.5倍，平均亚阈值摆幅（ 党卫军 _AVE ）从82.5 mV / dec降低到43.9 mV / dec。此外，落射通道厚度的影响（ Ť _CH ）和源重叠长度（ 大号 通过模拟2D轮廓BTBT生成速率和电子密度来分析_S，OV）变化。使用优化的设备参数（4纳米）Ť _CH和35 nm大号 _S，OV ），不增加导通电流就可提高约1.6倍。党卫军 以及双极性电流退化。