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Environmental-Variation-Tolerant Magnetic Tunnel Junction-Based Physical Unclonable Function Cell With Auto Write-Back Technique
IEEE Transactions on Information Forensics and Security ( IF 6.3 ) Pub Date : 3-24-2021 , DOI: 10.1109/tifs.2021.3067173
Byungkyu Song 1 , Sehee Lim 1 , Seung H. Kang 2 , Seong-Ook Jung 1
Affiliation  

Recently, with the increase in popularity of Internet of Things (IoT) devices, cryptographic protection techniques have become necessary for high-security applications. In general, IoT devices have strict power and area constraints. Thus, use of a physical unclonable function (PUF), which can generate a secret key at low cost, can be advantageous for high-security IoT devices. This paper presents a novel environmental-variation-tolerant (EVT) magnetic tunnel junction (MTJ)-based PUF that has a small area, high randomness, and low bit error rate (BER) compared to previous PUFs. The simulation results obtained using industry-compatible 65-nm model parameters indicate that the proposed PUF exhibits an inter-chip Hamming distance of 0.4901 and entropy of 0.9997, which proves the randomness of the PUF response. In addition, the proposed PUF exhibits the lowest BER across a wide voltage range (0.9 V-1.3 V) and temperature range (-25 °C - 75 °C) compared with previous PUFs.

中文翻译:


具有自动回写技术的基于耐环境变化磁隧道结的物理不可克隆功能单元



近年来,随着物联网(IoT)设备的日益普及,加密保护技术已成为高安全性应用所必需的。一般来说,物联网设备有严格的功率和面积限制。因此,使用可以以低成本生成密钥的物理不可克隆函数(PUF)对于高安全性物联网设备来说是有利的。本文提出了一种新型的基于耐环境变化 (EVT) 磁隧道结 (MTJ) 的 PUF,与以前的 PUF 相比,它具有小面积、高随机性和低误码率 (BER)。使用行业兼容的65 nm模型参数获得的仿真结果表明,所提出的PUF的芯片间汉明距离为0.4901,熵为0.9997,这证明了PUF响应的随机性。此外,与之前的 PUF 相比,所提出的 PUF 在宽电压范围 (0.9 V-1.3 V) 和温度范围 (-25 °C - 75 °C) 内表现出最低的 BER。
更新日期:2024-08-22
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