Silicon Carbide (SiC) MOSFETs are usually paralleled to increase the current capability for high power applications. While, the asymmetrical parasitic parameters of the wide-used laminated busbar can cause current imbalance for paralleled MOSFETs. The fast switching of SiC devices can further deteriorate the imbalance. However, the complex current paths and their mutual effects are seldom considered and effectively modeled for the parasitics of the busbar, which is not accurate enough to evaluate the current imbalance for the busbar connected with SiC devices. This paper proposes accurate modeling of the effective parasitic parameter of laminated busbars with paralleled SiC MOSFETs. The model incorporates not only the self-inductance and resistance but also the complex mutual coupling effect of all the current paths. Moreover, a switching period is divided into two durations for accurate effective parasitic models, in which the busbar can have different effective models regarding one physical structure. Furthermore, for easy evaluation of the current balance, a single effective model, namely equivalent model, is derived for a physical structure by replacing the complex mutual network. A specific laminated busbar for EV inverter is analyzed to prove the above theory, which is validated by simulation and experiment separately.

中文翻译：

---

连接并联SiC MOSFET的叠层母线的有效寄生参数的精确建模

碳化硅（SiC）MOSFET通常并联以增加高功率应用的电流容量。同时，广泛使用的叠层母线的非对称寄生参数会导致并联MOSFET的电流不平衡。SiC器件的快速切换会进一步加剧不平衡。但是，很少考虑复杂的电流路径及其相互影响，并且无法针对母线的寄生效应对其进行有效建模，这对于评估与SiC器件连接的母线的电流不平衡而言不够准确。本文提出了具有并联SiC MOSFET的叠层母线的有效寄生参数的精确建模。该模型不仅考虑了自感和电阻，还考虑了所有电流路径的复杂互耦效应。而且，对于精确的有效寄生模型，开关周期分为两个持续时间，其中母线可以针对一个物理结构具有不同的有效模型。此外，为了容易地评估当前余额，通过替换复杂的相互网络，为物理结构导出了一个有效模型，即等效模型。分析了用于EV逆变器的特定叠层母线，以证明上述理论，并通过仿真和实验分别对其进行了验证。