Abstract

The comparative deposition of ZnO:Ga layers by the magnetron sputtering of a ZnO:Ga (3 mol %) ceramic target and a composite ZnO:Ga(3 mol %)–Zn(20 wt %) cermet target is performed in the direct current mode at substrate temperatures of 50°С and 200°С. Studies of the formation processes, structure, and functional characteristics of the layers obtained by the sputtering of targets of both types in an atmosphere of argon showed that an increase in the zinc content in the reagent flux upon heating of the substrate to 200°С promotes improvement in the structural perfection of the layers and conductivity accompanied with the preservation of a high coefficient of optical transmittance.

中文翻译：

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磁控溅射复合ZnO：Ga-Zn金属陶瓷靶材获得的基于ZnO的透明导电层：第1部分

摘要

在直流电中通过磁控溅射ZnO：Ga（3 mol％）陶瓷靶和复合ZnO：Ga（3 mol％）– Zn（20 wt％）金属陶瓷靶进行磁控溅射的ZnO：Ga层比较沉积基板温度分别为50°С和200°С的模式。对通过在氩气中溅射两种靶材而获得的层的形成过程，结构和功能特性的研究表明，将底物加热到200°С后，试剂通量中锌含量的增加促进了改善层的结构和导电性，同时保持高透光率。