Herein, we report on a photoluminescence (PL) method for evaluating the Mg acceptor concentration in GaN, which has thus far been difficult and costly to determine using conventional electrical methods. The proposed method is based on the intensity ratio between the acceptor bound exciton emission and free exciton emission in the PL spectra of GaN. The calibration curve for the Mg acceptor concentration ranging from 6.4 10¹⁶ to 1.2 10¹⁸ cm⁻³ was obtained from the concentration dependence of the PL spectra recorded at 40 K. Furthermore, the detection limit of the Mg acceptor concentration from this method was estimated to be approximately 10¹⁰ cm⁻³. Results indicate that our method enables the unambiguous, simple, low-cost, and nondestructive quantification of the Mg acceptor concentration of p-type GaN, which is important in power device applications.

在此，我们报告了一种用于评估 GaN 中 Mg 受体浓度的光致发光 (PL) 方法，迄今为止，使用传统的电学方法很难确定该方法且成本高昂。所提出的方法基于 GaN PL 光谱中受主束缚激子发射和自由激子发射之间的强度比。Mg 受体浓度范围从 6.4 10 ¹⁶到 1.2 10 ¹⁸ cm ^-3的校准曲线是从 40 K 记录的 PL 光谱的浓度依赖性中获得的。此外，估计了来自该方法的 Mg 受体浓度的检测限大约为 10 ¹⁰ cm ^-3. 结果表明，我们的方法能够对 p 型 GaN 的 Mg 受体浓度进行明确、简单、低成本和非破坏性的量化，这在功率器件应用中很重要。