Microwave plasma chemical vapor deposition (MPCVD) offers us a new option to realize high-temperature epitaxy. In this work, AlN films were deposited on 6H-SiC substrates by MPCVD. The epitaxy was carried out without the participation of ammonia. The results reveal that workable temperature for AlN epitaxy is from 1300 C–1450 C. X-ray rocking curves and X-ray photoelectron spectroscopy confirm the improved crystalline quality of AlN grown at higher temperatures. The narrowest FWHM of X-ray rocking curves for AlN (0002) and (10–12) are 142 and 350arcsec at 1450 C, respectively. Possible growth mechanisms are suggested.

微波等离子体化学气相沉积（MPCVD）为我们提供了一种实现高温外延的新选择。在这项工作中，AlN 薄膜通过 MPCVD 沉积在 6H-SiC 衬底上。在没有氨的参与下进行外延。结果表明，AlN 外延的工作温度为 1300 C-1450 C。X 射线摇摆曲线和 X 射线光电子能谱证实了在较高温度下生长的 AlN 晶体质量的提高。AlN (0002) 和 (10-12) 的 X 射线摇摆曲线的最窄 FWHM 在 1450 C 下分别为 142 和 350 弧秒。建议了可能的生长机制。