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X-ray magnetic linear dichroism study of field-manipulated canted antiferromagnetism in epitaxialα−Fe2O3films
Physical Review Materials ( IF 3.1 ) Pub Date : 2021-04-20 , DOI: 10.1103/physrevmaterials.5.044408 Sergey M. Suturin , Alexander M. Korovin , Sergey V. Gastev , Polina A. Dvortsova , Mikhail P. Volkov , Manuel Valvidares , Nikolai S. Sokolov
Physical Review Materials ( IF 3.1 ) Pub Date : 2021-04-20 , DOI: 10.1103/physrevmaterials.5.044408 Sergey M. Suturin , Alexander M. Korovin , Sergey V. Gastev , Polina A. Dvortsova , Mikhail P. Volkov , Manuel Valvidares , Nikolai S. Sokolov
This paper describes manipulation of the antiferromagnetic (AFM) moment by external magnetic field in thin epitaxial nanofilms of —the iron oxide polymorph known for its canted antiferromagnetism above the Morin temperature. The field-driven rotation of the AFM moment has been detected in thin /GaN layers by monitoring the azimuthal field dependence of the x-ray magnetic linear dichroism line shape at absorption edge of iron. The presence of the tiny canted ferrimagnetic (FM) moment in makes it possible to manipulate the related AFM moment by applying external magnetic field, monitoring the field-driven rotation of both AFM and FM moments that otherwise can be hardly detected in a nanoscale film by conventional magnetometry. A controllable manipulation of the AFM moment in a thin film by external magnetic field is supposed to be an important keystone for development of the emerging field of AFM spintronics.
中文翻译:
外延α-Fe2O3薄膜中场操纵倾斜反铁磁性的X射线磁性线性二向色性研究
本文描述了外磁场对薄膜外延纳米膜中反铁磁(AFM)矩的操纵。 -氧化铁多晶型物,其在Morin温度以上具有倾斜的反铁磁性。在薄层中检测到了AFM力矩的场驱动旋转/ GaN层,通过监测x射线磁性线性二向色性线形在20°C时的方位角场依赖性 铁的吸收边缘。微小倾斜铁磁(FM)矩的存在通过施加外部磁场,监测AFM和FM力矩的场驱动旋转,可以通过传统的磁力技术在纳米级薄膜中很难检测到相关的AFM力矩。外界磁场对薄膜中AFM力矩的可控控制被认为是AFM自旋电子学新兴领域发展的重要基石。
更新日期:2021-04-20
中文翻译:
外延α-Fe2O3薄膜中场操纵倾斜反铁磁性的X射线磁性线性二向色性研究
本文描述了外磁场对薄膜外延纳米膜中反铁磁(AFM)矩的操纵。 -氧化铁多晶型物,其在Morin温度以上具有倾斜的反铁磁性。在薄层中检测到了AFM力矩的场驱动旋转/ GaN层,通过监测x射线磁性线性二向色性线形在20°C时的方位角场依赖性 铁的吸收边缘。微小倾斜铁磁(FM)矩的存在通过施加外部磁场,监测AFM和FM力矩的场驱动旋转,可以通过传统的磁力技术在纳米级薄膜中很难检测到相关的AFM力矩。外界磁场对薄膜中AFM力矩的可控控制被认为是AFM自旋电子学新兴领域发展的重要基石。