Future PHz electronic devices may be able to perform operations on few-femtosecond time-scales. Such devices are based on the ability to control currents induced by intense few-cycle laser pulses. Investigations of this control scheme have been based on complex, amplified laser systems, typically delivering mJ or sub-mJ-level laser pulses, limiting the achievable clock rate to the kHz regime. Here, we demonstrate transient metallization and lightwave-driven current control with 300-pJ laser pulses at 80 MHz repetition rate in dielectric media (HfO₂ and fused silica), and the wide-bandgap semiconductor GaN. We determine the field strength dependence of optically induced currents in these media. Supported by a theoretical model, we show scaling behaviors that will be instrumental in the construction of PHz electronic devices.

中文翻译：

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pJ级激光脉冲以80 MHz重复频率在固体中进行光场驱动的电流控制

未来的PHz电子设备可能能够在几飞秒的时间范围内执行操作。这样的设备基于控制由强烈的短周期激光脉冲感应的电流的能力。该控制方案的研究基于复杂的放大激光系统，通常会提供mJ或亚mJ级的激光脉冲，从而将可达到的时钟速率限制在kHz范围内。在这里，我们演示了在介电介质（HfO _2）中以80 MHz重复频率用300 pJ激光脉冲进行瞬态金属化和光波驱动的电流控制和熔融石英），以及宽带隙半导体GaN。我们确定在这些介质中光感应电流的场强依赖性。在理论模型的支持下，我们展示了缩放行为，这些行为将在PHz电子设备的构造中发挥作用。