Doping plays a vital role in tuning the carrier concentration and also influences various electronic properties in semiconductors. In addition to tuning the electronic properties of semiconductors, impurities also affect vibrational properties. We report the local vibrational modes (LVMs) in N-doped n-type 6H-SiC. New phonon modes are observed in the low-temperature range. Unlike lattice phonons, LVMs are localized in both the real space and frequency domains and give rise to a distinct signature in the Raman spectra. In the present study, LVMs in N-doped 6H-SiC are identified as N atom vibrations with the help of lattice dynamical calculations of the phonon density of states using generalized gradient approximation. Moreover, the stability of the SiC is investigated for a wide temperature range signifying its application in micro-electro-mechanical systems technology. Therefore, the present study provides insight for understanding both lattice phonons and the impurity-induced vibrational modes using Raman spectroscopic analysis in corroboration with the calculation of phonon density of states.

掺杂在调节载流子浓度方面起着至关重要的作用，并且还影响半导体中的各种电子性能。除了调整半导体的电子特性外，杂质还会影响振动特性。我们报告了N掺杂n中的局部振动模（LVM）型6H-SiC。在低温范围内观察到新的声子模式。与晶格声子不同，LVM位于真实空间和频域中，并在拉曼光谱中产生独特的特征。在本研究中，借助于使用广义梯度近似的声子密度态的晶格动力学计算，将N掺杂6H-SiC中的LVM识别为N原子振动。此外，在很宽的温度范围内研究了SiC的稳定性，表明其在微机电系统技术中的应用。因此，本研究为通过使用拉曼光谱分析证实晶格声子和杂质诱发的振动模式提供了见识，从而佐证了声子密度的计算。