We assessed the capability to quantify and depth profile boron in different materials by a number of ion beam-based techniques. Specifically, the depth resolution, probing depth, film homogeneity, and detection limit for boron using particle-particle nuclear reaction analysis (resonant and non-resonant mode), elastic backscattering spectrometry, and time-of-flight elastic recoil detection analysis using heavy primary ions were evaluated. Samples consisted of high and low-Z materials implanted by ¹¹B⁺ at different energies and fluences, Au/BN structures as well as bulk boride targets. Advantages and limitations for the individual techniques for the different sample types are discussed. As an example, while ToF-ERDA allows to efficiently depth profile ¹⁰B and ¹¹B individually, limitations in probing depth and depth resolution, as well as quantification are apparent in particular for target materials containing high-Z species. While EBS presents large probing depth (~14 μm), the best detection limit (~0.1 × 10¹⁵/cm²) is obtained from resonant-NRA.

我们通过多种基于离子束的技术评估了量化和深度剖析不同材料中硼的能力。具体而言，使用粒子-核反应分析（共振和非共振模式），弹性背散射光谱和飞行时间弹性反冲检测分析（使用重质一次生）对硼的深度分辨率，探测深度，膜均匀性和检测极限对离子进行了评估。样品由以不同能量和注量注入¹¹ B ⁺的高Z和低Z材料，Au / BN结构以及块状硼化物靶组成。讨论了针对不同样本类型的单个技术的优点和局限性。例如，ToF-ERDA允许有效地深度剖面¹⁰ B和¹¹乙单独，在探测深度和深度分辨率，以及量化的限制是特别是用于含有高Z物种靶材料显而易见。虽然EBS探测深度大（〜14μm），但从共振NRA可获得最佳检测极限（〜0.1×10 ¹⁵ / cm ²）。