The impact of heavy ion energy and species on single-event upsets (SEU) sensitivity in state-of-the-art NAND Flash memories is investigated in this paper. Experimental results indicate that the heavy ion with the same linear-energy-transfer (LET) but higher energy and mass will cause a decrease in the SEU cross-section of the three kinds of floating gate cells when the device surface LET value is 37.6 and 50.3 MeV·cm²/mg. The Geant4 simulation analysis show that the influence of the sensitive layer depth on LET and the difference in ion track structure are the main mechanisms for this experimental result. Some typical satellite orbits are also selected to study the influence of heavy ion energy and species on predicting the on-orbit error rate using SPACE RADIATION software.

本文研究了重离子能量和种类对​​最新NAND闪存中单事件翻转（SEU）灵敏度的影响。实验结果表明，当器件表面LET值为37.6时，具有相同的线性能量转移（LET）但能量和质量较高的重离子会导致三种浮栅单元的SEU截面减小。 50.3 MeV ·cm ² / mg。Geant4仿真分析表明，敏感层深度对LET的影响以及离子径迹结构的差异是该实验结果的主要机理。还选择了一些典型的卫星轨道来研究重离子能量和物质对使用SPACE RADIATION软件预测在轨误差率的影响。