An exfoliated MoTe₂ flake in contact with a ferroelectric single-crystal substrate was studied to examine its charge carrier modulation by neighboring ferroelectric polarization. A MoTe₂ field-effect transistor was fabricated, having a hexagonal-BN (hBN) flake and a ferroelectric substrate employed as top and bottom gate dielectrics. In the dual-gate operation, the charge conduction exhibited an ambipolar behavior with large hysteresis during the gate voltage sweep. It mainly originates from the ferroelectric nature in combination with the charge trap phenomena at the interfaces. Interestingly, we found out that holes are more easily trapped than electrons, and charge carriers in MoTe₂ are easily modulated through the top hBN gate when the electron conduction is predominantly set by the bottom ferroelectric field. However, the controllability becomes much weaker under opposing ferroelectric polarizations. This unbalanced controllability reveals the interfacial hole-trap effect resulting from ferroelectric polarization.

研究了与铁电单晶衬底接触的片状MoTe ₂薄片，以检查其通过邻近铁电极化的电荷载流子调制。制造了具有六方BN（hBN）薄片和用作顶部和底部栅极电介质的铁电衬底的MoTe ₂场效应晶体管。在双栅极操作中，在栅极电压扫描期间，电荷传导表现出具有大滞后的双极性行为。它主要源自铁电性质以及界面处的电荷陷阱现象。有趣的是，我们发现空穴比电子更容易俘获，并且MoTe _2中的载流子当电子传导主要由底部铁电场设定时，通过顶部hBN栅极很容易调制这些元素。但是，在相反的铁电极化下，可控性变得很弱。这种不平衡的可控制性揭示了由铁电极化引起的界面空穴陷阱效应。