This paper presents a 120-GHz wideband phase-compensated variable gain amplifier (VGA) with a p-type metal–oxide–semiconductor (PMOS) switch using a 40-nm CMOS process. By applying a PMOS switch to the common source (CS) amplifier, the gain of the CS amplifier can be controlled by as much as 6.1 dB with 2° phase variations in 15.1-GHz bandwidth ranging from 100.9 to 115 GHz. The measured gain and 3-dB bandwidth of the VGA are 19.1 dB and 33.8 GHz for high-gain state, and 13 dB and 44.2 GHz for low gain state, respectively. Meanwhile, the DC power consumption in the high-gain state is 45 mW, and the OP1dB is −2.7 dBm.

本文提出了一种采用40 nm CMOS工艺的带p型金属氧化物半导体（PMOS）开关的120 GHz宽带相位补偿可变增益放大器（VGA）。通过将PMOS开关应用于公共源（CS）放大器，可以在范围从10.9 GHz至115 GHz的15.1 GHz带宽中，在2°相位变化的情况下，将CS放大器的增益控制在6.1 dB之内。VGA的测得增益和3 dB带宽在高增益状态下分别为19.1 dB和33.8 GHz，在低增益状态下分别为13 dB和44.2 GHz。同时，高增益状态下的DC功耗为45 mW，OP1dB为-2.7 dBm。