The tunnel field-effect transistor (TFET) is an ambipolar device that conducts current with the channel in both accumulation and inversion modes. Analytical expressions for the channel potential and current in a TFET with an n-doped channel when operating in the accumulation and inversion modes are proposed herein. The potential model is derived by solving the two-dimensional (2D) Poisson equation using the superposition principle while considering the charges present in the channel due to electron or hole accumulation along with the depletion charges. An expression for the tunneling current corresponding to the maximum tunneling probability is also derived. The tunneling current is obtained by analytically calculating the minimum tunneling length in a TFET when operating in the accumulation or inversion mode. The results of the proposed potential model is compared with technology computer-aided design (TCAD) simulations for TFET with various dimensions, revealing good agreement. The potential and current in an n-type TFET (nTFET) obtained using the proposed models are also analyzed.

隧道场效应晶体管（TFET）是一种双极型器件，可以在累积和反相模式下与沟道传导电流。具有n的TFET中的沟道电势和电流的解析表达式本文提出了在累积和反转模式下工作时的掺杂通道。通过使用叠加原理求解二维（2D）泊松方程，同时考虑由于电子或空穴的积累而在沟道中存在的电荷以及耗尽电荷，可以得出二维（2D）泊松方程。还推导了对应于最大隧穿概率的隧穿电流的表达式。通过以累积或反转模式工作时，通过分析计算TFET中的最小隧穿长度来获得隧穿电流。所提出的潜在模型的结果与各种尺寸的TFET的技术计算机辅助设计（TCAD）仿真进行了比较，显示出良好的一致性。在该电压和电流ñ型TFET（ñ利用提出的模型获得的TFET）进行了分析。