We report experimental study of the transformation of the oxide-coated InP(001) surface during annealing in an arsenic flux. Using the RHEED method, it was shown that an InP_1-хAs_х layer is formed on the surface. The transformation of an oxidized surface occurs at a temperature higher at about 60°C than the transformation of an atomically clean surface. The activation energy E_a = 1.17 eV of the formation of an arsenic-containing layer was determined. The amount of arsenic substitution for phosphorus at different annealing temperatures was determined, which is 7% at an annealing temperature of 480°C and increases to 41% with an increase in the annealing temperature to 540°C. SEM analysis of surface reveals areas with high arsenic content (InAs islands). The size and density of such regions increases with an increase in the annealing temperature and at 540°C reaches 5.5 × 10³ nm² and 6 × 10⁹ cm⁻², respectively. However, despite the local inhomogeneities, the main surface area is covered with a uniform InPAs layer. The area covered with InAs islands occupies about 1.5% of the surface area at an annealing temperature of 540°C.

我们报告了在砷熔剂退火过程中氧化覆膜的InP（001）表面转变的实验研究。使用RHEED方法，它表明在InP _1-х作为_х在表面上形成的层。氧化表面的转变发生在比原子清洁表面的转变高约60°C的温度下。活化能E _a 确定含砷层的形成＝ 1.17eV。确定了在不同退火温度下磷的砷替代量，其在480℃的退火温度下为7％，并且随着退火温度升高至540℃而增加至41％。表面的SEM分析显示砷含量高的区域（InAs岛）。这些区域的尺寸和密度随着退火温度的升高而增加，并且在540°C时分别达到5.5×10 ³  nm ²和6×10 ⁹  cm ^-2。， 分别。但是，尽管局部不均匀，主表面仍覆盖有均匀的InPAs层。在540°C的退火温度下，InAs岛覆盖的面积约占表面积的1.5％。