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IC Pin Modeling and Mitigation of ESD-Induced Soft Failures
IEEE Transactions on Electromagnetic Compatibility ( IF 2.1 ) Pub Date : 2020-09-22 , DOI: 10.1109/temc.2020.3011544
Giorgi Maghlakelidze , Li Shen , Harald Gossner , David Pommerenke , DongHyun Kim

In this article, electrostatic discharge (ESD) induced soft failures (SFs) of a USB3 Gen1 device are investigated by direct transmission line pulse injection with varying pulsewidth, amplitude, and polarity to characterize the failure behavior of the interface and to create a SPICE model of the voltage and current waveform dependent failure thresholds. ESD protection by transient-voltage-suppression diodes is numerically simulated in several configurations. The results show viability of using well-established hard failure mitigation techniques for improving SF robustness. A good agreement between numerical simulation for optimized board design and measurements are achieved. A novel concept of SF system efficient ESD design is proposed and demonstrated to be effective for making decisions during early product development, in board designing and prototyping phase.

中文翻译:

IC引脚建模和ESD引起的软故障的缓解

本文通过直接传输线脉冲注入来研究USB3 Gen1设备的静电放电(ESD)引起的软故障(SF),该脉冲注入具有变化的脉冲宽度,幅度和极性,以表征接口的故障行为并创建SPICE模型取决于电压和电流波形的故障阈值。在几种配置中,对瞬态电压抑制二极管的ESD保护进行了数值模拟。结果表明,使用完善的硬故障缓解技术来改善SF鲁棒性的可行性。在优化板设计的数值模拟和测量之间达成了良好的协议。提出了SF系统高效ESD设计的新颖概念,并证明了它在早期产品开发过程中可以有效地做出决策,
更新日期:2020-09-22
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